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4N 5N Doped P and N type Bismuth Telluride


Mol. Wt.

800.761

Density at 25 °C(lit.)

7.642 g·cm−3

Melting Point

586°C

Electrical Conductivity

1050/950

Thermal Conductivity

1.35/1.3

Seebeck Coefficient

220/280

Test Temp.

300K

Minimum Order Quantity

100Grams

Packaging Details

sample: 1kg per bag, standard: 25kg per drum lined with thick plastic bag.

Delivery Time

1-3 days for sample order, 7-9 days for quantity large than 500kg order.

Payment Terms

T/T, L/C, PAYPAL, West Union

Supply Ability

300kg per month

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Quick Detail
1.Bismuth Telluride, Bi2Te3 powder, Bismuth Telluride powder, Bismuth Telluride rod, Bismuth Telluride piece, Bismuth Telluride slice, Bismuth Telluride target
2.Used as thermoelectric materials
3.99.99%, 99.999%, 100 mesh, 200 mesh, 325 mesh

Description
Bismuth Telluride is a narrow gap layered semiconductor with a trigonal unit cell. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for refrigeration or power generation. Santech Materials can produce Bismuth Telluride doped P and N type in powder, rod form, also we can slice into cubic granule or required size.


Applications
1. Thermoelectric material
2. Energy harvesting
3. Chip cooling
4. Chip sensing


Specifications

Grade

Concentration - (ppm by wt)

Element

Standard

Element

Standard

Cu

2.0

Ca

5.0

Ag

2.0

Fe

5.0

Mg

5.0

As

10.0

Sb

5.0

Al

5.0

Zn

5.0

Pb

5.0